Toshiba releases 3rd generation 650V SiC MOSFETs in a DFN8x8 package

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched four 650V silicon carbide (SiC) MOSFETs, equipped with its latest[1] 3rd generation SiC MOSFET chips and housed in a compact DFN8x8 package, suitable for industrial equipment, such as switched-mode power supplies and power conditioners for photovoltaic generators. Volume shipments of the four devices, “TW031V65C,” “TW054V65C,” “TW092V65C,” and “TW123V65C,” start today.

Toshiba Electronic Devices & Storage Corporation

The new products are the first 3rd generation SiC MOSFETs to use the small surface-mount DFN8x8 package, which reduces volume by more than 90% compared to lead-inserted packages, such as TO-247 and TO-247-4L(X) and improves equipment power density. Surface mounting also allows use of parasitic impedance[2] components smaller than those of lead-inserted packages, reducing switching losses.

DFN8x8 is a 4-pin[3] package, allowing use of a Kelvin connection of its signal source terminal for the gate drive. This reduces the influence of inductance in the source wire within the package, achieving high-speed switching performance; in the case of TW054V65C, it reduces turn-on loss by approximately 55% and turn-off loss by approximately 25%[4] compared to current Toshiba products[5], helping to reduce power loss in equipment.

Toshiba will continue to expand its lineup to contribute to improved equipment efficiency and increased power capacity.

Applications:
  • Switched mode power supplies in servers, data centers, communications equipment, etc.
  • EV charging stations
  • Photovoltaic inverters
  • Uninterruptible power supplies
Features:
  • DFN8x8 surface-mount package. Enables equipment miniaturization of and automated assembly. Low switching loss.
  • Toshiba’s 3rd generation SiC MOSFETs
  • Good temperature dependence of drain-source On-resistance by optimization of drift resistance and channel resistance ratio
  • Low drain-source On-resistance x gate-drain charges
  • Low diode forward voltage: VDSF=-1.35V(typ.) (VGS=-5V)
About Toshiba Electronic Devices & Storage Corporation:

Toshiba Electronic Devices & Storage Corporation, a leading supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products.

Its 19,400 employees around the world share a determination to maximize product value, and to promote close collaboration with customers in the co-creation of value and new markets. The company looks forward to building and to contributing to a better future for people everywhere.

For more information please visit, www.https://toshiba.semicon-storage.com/ap-en/top.html

 

Contact the company, Toshiba Electronic Devices & Storage Corporation


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